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Home > Anterior Cervical Plating Systems > CVD Ald Atomic Layer Deposition System for Powder Coating Plating
CVD Ald Atomic Layer Deposition System for Powder Coating Plating
CVD Ald Atomic Layer Deposition System for Powder Coating Plating
CVD Ald Atomic Layer Deposition System for Powder Coating Plating
CVD Ald Atomic Layer Deposition System for Powder Coating Plating
CVD Ald Atomic Layer Deposition System for Powder Coating Plating
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CVD Ald Atomic Layer Deposition System for Powder Coating Plating
CVD Ald Atomic Layer Deposition System for Powder Coating Plating
CVD Ald Atomic Layer Deposition System for Powder Coating Plating
CVD Ald Atomic Layer Deposition System for Powder Coating Plating
CVD Ald Atomic Layer Deposition System for Powder Coating Plating

CVD Ald Atomic Layer Deposition System for Powder Coating Plating

Customization: Available
After-sales Service: Onlin
Warranty: 1
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Product Description

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Basic Information

Model NO.CY-ALD
TypeCoating Production Line
CoatingVacuum Coating
CertificationCE
Wafer Dimension8 Inch and Below
Wafer TemperatureRt-400c (±0.1c)
ALD ValveSwagelok ALD Swift Valve
Gas CarrierN2 or Ar
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Product Description

CVD ALD Atomic Layer Deposition System for Powder Coating Plating

The Thermal Atomic Layer Deposition System is a single-wafer deposition system specifically designed for scientific research and small-scale industrial experiments. Fully compliant with CE standards, it is widely utilized in micro-electronics, nanomaterials, optical films, and solar battery research.

Key Benefits

  • Advanced software control system with integrated technological formulation.
  • Precise parameter setting and interlocking alarm systems.
  • Real-state supervisory control for consistent results.

Available ALD Films

Elementary Substances: Co, Cu, Ta, Ti, W, Ge, Pt, Ru, Ni, Fe...
Nitrides: TiN, SiN, AlN, TaN, ZrN, HfN, WN...
Oxides: TiO2, HfO2, SiO2, ZnO, ZrO2, Al2O3, La2O3, SnO2...
Others: GaAs, AlP, InP, GaP, InAs, LaHfxOy, SrTiO3, SrTaO6...

Technical Parameters

Parameter Specification
Wafer Dimension8 inch and below
Wafer TemperatureRT-400ºC, Precision ±0.1ºC
Number of Precursors3 lines (Optional more)
Precursor Line TempRT-200ºC, Precision ±0.1ºC
Background Vacuum<5*10⁻³ Torr
Growing ModeConsecutive or interval deposition
Control SystemPLC + Touch Screen
Dimensions600mm x 600mm x 1100mm
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Detailed Photos

ALD System View 1
ALD System View 2
ALD System View 3
ALD System View 4
ALD System View 5
ALD System View 6
Detail Banner
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Frequently Asked Questions

What is the temperature control precision of this ALD system?
The system provides high-precision temperature control for both the wafer (RT-400ºC) and precursor lines (RT-200ºC) with a controlling precision of ±0.1ºC.
Which types of materials can be coated using this equipment?
The system is versatile and can deposit elementary substances (like Cu, Ti, Pt), various nitrides (TiN, AlN), oxides (Al2O3, TiO2, SiO2), and other complex structures like GaAs or Solar battery components.
Does the system support customized precursor configurations?
Yes, the standard configuration includes three precursor lines, but it is optional to add more lines based on specific research or production needs.
What kind of control interface does the machine use?
The system is equipped with a professional PLC control system combined with a touch screen or display for intuitive operation and parameter management.
How is the product packaged for international shipping?
We use standard export fumigation wooden box packaging to ensure the safety of the instrument during transit via sea, air, or express delivery.
What is the typical lead time for a customized instrument?
For standard stock items, delivery takes 5-10 days. For customized specifications, the process usually takes 30-60 days depending on the requirements.

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